绝缘栅GaN基平面功率开关器件技术

Insulated-gate GaN-based Lateral Power Switching Device Technology

绝缘栅氮化镓(GaN)基平面功率开关器件是下一代GaN功率电子技术的最佳选择。在此从Si基GaN金属绝缘体(氧化物)半导体(MIS/MOS)高电子迁移率晶体管(HEMT)器件面临的界面态和增强型栅产业化制备等方面入手,介绍了绝缘栅GaN基器件表界面态工程,高可靠栅介质及兼容互补MOS(CMOS)工艺的大尺寸Si基GaN器件制造等技术的研究进展,为绝缘栅GaN基平面功率开关器件的产业化应用奠定基础。

Insulated-gate gallium nitride （GaN）-based lateral power switch is the best candidate for next-generation GaN power electronic technology.The scientific and technical challenges towards high-performance GaN-on-Si metal- insulator （oxide）-semiconductor （MIS/MOS） high-electron-mobility transistors （HEMT） are systematically analyzed, in- cluding surface/interface states induced threshold voltage instability and dynamic on-resistance degradation ,and con- trollability in enhancement-mode gate fabrication.State-of-the-art MIS/MOS-HEMT technologies are introduced, includ- ing engineering of surface/interface states on（A1）GaN, growth of high reliability gate dielectrics, and key technologies in fabrication of GaN-on-Si power devices in Si-complementary MOS（CMOS） foundries.