倒装焊结构对太赫兹对数周期天线的影响（英文）

Affects of flip-chip structure on the performance of THz detector with log periodic antenna

设计了一种倒装焊结构,用于340 GHz的肖特基二极管探测器.探测单元是基于砷化镓(GaA s)工艺设计的.薄膜陶瓷支撑层旨在为太赫兹检测单元提供封装.通常,导电胶用作天线和输出电路之间的附接.分别对倒装焊结构和无倒装焊结构(类引线键合结构)模型对太赫兹接收天线性能的影响进行研究.为了比较的目的,使用相同的测试系统表征FC结构模型和无FC结构模型(引线键合结构).通过引线键合与倒装焊测试增益的结果比较,表明倒装焊结构可以作为大规模太赫兹检测阵列封装的低成本解决方案.

This paper presents a novel flip-chip （FC） structure design for 340 GHz Schottky diode detectors, which was designed and fabricated based on the gallium arsenide （GaAs） process. A ceramic thin-film supporting layer was used to provide a package for such detector. Conductive adhesive is typically used as attachment material between the antenna and output circuit. The behaviour of terahertz （THz） detectors with and without the novel FC structure was studied. For comparison, the FC structure model and wire bonding structure one （ free of FC） were characterized using the same test system. A comparison analysis for the gains of the THz detector measured with and without the ceramic thin-film layer indicates that the novel FC structure offers a low-cost and practical solution for packaging the array of THz detectors.