石墨烯对多孔硅光学性能的影响

Effect of the Graphene on Optical Properties of the Porous Silicon

采用电化学腐蚀法,通过改变腐蚀电流密度制备出不同孔径的多孔硅衬底。通过荧光分光光度计对多孔硅进行光致发光性能测试,测试结果发现腐蚀电流密度会对其光致发光性能产生影响,当腐蚀电流密度为30 mA/cm^2时,制备出的多孔硅光致发光性能较好。通过湿法转移法将化学气相沉积(CVD)法制备出的石墨烯转移到多孔硅表面,利用喇曼光谱对石墨烯进行质量及层数检测。通过荧光分光光度计及傅里叶变换红外光谱仪(FTIR)对复合材料进行表征。结果表明石墨烯可以改变多孔硅表面态,使多孔硅的光致发光性能得到极大的提高。研究成果为多孔硅应用到光学传感器中提供了新的研究方向。

By using the electrochemical etching method and changing the corrosion current density, the porous silicon substrates with different pore sizes were prepared. The photoluminescence property of the porous silicon was measured by the fluorescence spectrophotometer. The results show that the corrosion current density has an effect on the photoluminescence property of the porous silicon. When the corrosion current density is 30 mA/cm^2 , the photoluminescence property of the prepared porous silicon is better. The graphene was prepared by the chemical vapor deposition （CVD） method and then transferred to the surface of the porous silicon by the wet transfer method. The quality and layer number of the graphene were detected by the Raman spectroscopy. The composites were characterized by the fluorescence spectrophotometer and Fourier transform infrared spectrometer （FTIR）. The results show that the graphene can change the porous silicon surface state and greatly improve the photoluminescence property of the porous silicon. The research results provide a new research direction for the application of the porous silicon in optical sensors.