中低压IGBT短路失效分析研究

Investigation on Short Circuit Failure Analysis of Medium and Low Voltage IGBT

针对中低压绝缘栅双极型晶体管(IGBT)器件GPU50HF120D1W1进行了不同短路时间的测试,发现存在4种短路失效模式,通过定义临界短路能量,将4种失效模式分为两大类。高于临界能量的失效模式中,延迟失效的主要原因是漏电流与温度形成了正反馈,导致器件持续升温,超长时失效是延迟失效的一种极限情况;而低于临界能量的失效模式中,造成短时失效的主要原因是器件加工生产过程中的缺陷和不一致性引起局部漏电流过大,造成关断失效的主要原因是大电流快速关断和动态雪崩触发了IGBT的闩锁效应。

A low voltage insulated gate bipolar transistor（IGBT） device GPU50HF120D1W1 of different short time test is studied.There are four kinds of short-circuit failure mode through the definition of critical short-circuit energy, four kinds of failure modes are divided into two categories.The failure mode is higher than the critical energy, the main reason of delay failure is the leakage current and temperature to form a positive feedback.Leading to device failure long continued heat up,the long time failure is an extreme case of delayed failure.Failure mode and lower than the critical energy, resulting in short time failure is primarily due to the defects in the production process of processing device and inconsistency caused by local leakage flow, mainly caused by the shutdown failure is high current fast shutdown and dynamic avalanche triggered IGBT latch up effect.