硅片酸腐蚀影响因素的正交实验

The Orthogonal Experiment of Wafer Acid Etching

设计了正交实验,探究了腐蚀温度、辊筒转速、鼓泡时间、提臂摇动速率与腐蚀速率和TTV变化的影响;发现酸腐蚀过程中,宜设置适中的温度、较长的鼓泡时间以保证腐蚀速率和几何参数。

An orthogonal experiment was designed to investigate the influences of etching temperature, rolling speed, bubbling time, mechanical arm shaking rate on wafer etching rate and TTV. It was found that in order to ensure the etching rate and geometric parameters, it is necessary to set moderate temperature and longer bubbling time during wafer etching process.