绝缘栅双极型晶体管过流保护的分析与研究

Research and analyses of over-current protection of IGBTs

绝缘栅双极晶体管运用广泛,但是要设计出稳定可靠的驱动电路或过流保护电路等一直是个难题。本文对绝缘栅双极型晶体管过流保护进行理论分析,阐述其过流的特点和过流保护的方法,结合实际设计案例进行分析研究与试验,通过试验测试实际使用过流保护电路时存在的问题,了解绝缘栅双极型晶体管过流保护的相关特点。让读者在设计过流保护电路的时候应充分考虑这些特点,选用合适的电子器件,搭建合适的过流保护电路。这对工程设计和工程现场有很好的指导意义。

Insulated gate bipolar transistors（IGBTs） are used widely. But it is always a difficult problem to design a stable and reliable drive circuit or over-current protection circuit. In this paper, overcurrent protection of 1GBT is analyzed theoretically ,as well as the characteristics and protection methods of the over- current. Combined with the actual design cases ,analyses and tests are completed. The problems existing in the practical application of the over-current protection circuit are tested and the related characteristics of the over-current protection of IGBT areunderstood. When over-current protection circuits are designed, readers should consider these characteristics fully and select the appropriate electronic devices to build suitable over-current protection circuit. This has a good guiding significance for engineering design and engineering field.