摘要
优化设计了975nm分布反馈激光器的一级布拉格光栅结构。将纳米压印技术与干法刻蚀工艺相结合制备周期为148nm的光栅结构,通过优化调整刻蚀气体流量比、腔室压强和偏压功率等参数,得到了合适的光栅刻蚀工艺参数。扫描电子显微镜测试显示,光栅周期为148nm,占空比接近50%,深度合适,表面形貌、连续性和均匀性良好。将所制备光栅应用于975nm分布反馈激光器中,激光器输出性能良好,波长随温度漂移系数小,光栅对波长的锁定效果良好。
The first-order Bragg grating structure of 975nm distributed feedback semiconductor laser is designed and optimized. The grating with a period of 148 nm is fabricated by the nanoimprint and dry etching process, and the etching process parameters of the reactive gas flow ratio, chamber pressure and bias power are optimized and determined. The scanning electron microscopy measurement shows that the grating has a period of 148 nm, duty cycle of about 0.5, appropriate depth, with perfect surface morphology, good fringe continuity and uniformity. The fabricated grating is applied to the 975 nm distributed feedback （DFB） laser. The laser shows good output performance, and thermal drift coefficient of wavelength on the DFB laser is low, the results indicated that wavelength is well-locked by the grating.
出处
《半导体光电》
北大核心
2017年第4期531-535,共5页
Semiconductor Optoelectronics
关键词
半导体激光器
分布反馈
一级光栅
干法刻蚀
semiconductor laser
distributed feedback
first-order grating
dry etching
