摘要
设计了一种高电源抑制比(PSRR)、低温漂的无电阻带隙基准源。在传统无电阻带隙基准电压源的基础上引入反馈环路,实现了对电压的箝制,减小了沟道长度调制效应和失调电压,提高了带隙基准源的PSRR。引入正温度补偿电路,减小了带隙基准源的温度系数。采用TSMC 0.18μm CMOS工艺对电路进行了仿真。结果表明,在3 V工作电压下,在低频下带隙基准源的PSRR为-65 d B,在-25℃~125℃温度范围内的温度系数为3.72×10^(-5)/℃。
A high power supply rejection ratio( PSRR) low temperature drift bandgap reference without resistors was designed. Based on the conventional bandgap voltage reference without resistors,a feedback loop was used to clamp the voltage,which had reduced the influences of channel length modulation effect and voltage offset. It also greatly improved the PSRR. And a positive temperature compensation circuit was added to reduce the temperature coefficient. It was designed and simulated in the TSMC 0. 18 μm CMOS process. Simulation results showed that under the operating voltage of 3 V,the PSRR was-65 d B at low frequency,and the temperature coefficient was 3. 72×10^(-5)/℃ at the temperature range of-25 ℃~ 125 ℃.
出处
《微电子学》
CSCD
北大核心
2017年第4期457-460,共4页
Microelectronics
基金
模拟集成电路重点实验室基金资助项目(9140C090113150C09043)
关键词
无电阻带隙电压基准
反馈环路
电源抑制比
温度系数
Bandgap voltage reference without resistors
Feedback loop
PSRR
Temperature coefficient