无输出电容的瞬态增强NMOS LDO

A Transient Enhanced Output-Capacitor-Less NMOS Low Dropout Regulator

提出了一种用于片内数字驱动的瞬态增强NMOS低压差线性稳压器(LDO)。该LDO采用电容耦合动态偏置和双环路推挽式驱动调整管,极大地提高了电路的瞬态响应速度。基于0.35μm BCD工艺的仿真结果表明,负载电流在0.1～100 m A之间的跃迁时间为100 ns时,电路的下冲电压为42 m V,过冲电压为66 m V,稳定时间仅为323 ns。该LDO电路的总体静态电流约为50μA,输出电流最大值为100 m A。

A transient response enhanced and output-capacitor-less NMOS low dropout regulator（ LDO） with on-chip digital driven was proposed. The capacitor coupling dynamic biasing and push-pull dual-loop power MOSFETs were used in the LDO,and the transient speed of the LDO had been enhanced significantly. Based on a 0. 35 μm BCD process,the simulation results showed that the LDO had an undershoot voltage of 42 m V,an over shoot voltage of 66 m V,and a settling time of 323 ns within 0. 1 ~ 100 m A load currentat 100 ns transition time. The total quiescent current of the LDO was 50 μA,and the maximum load current was 100 m A.