氩等离子体处理增强TiO_2∶Er/p^+-Si异质结器件的电致发光

Ar Plasma Treatment Enhancing EL from the TiO_2∶Er/p^+-Si Heterostructured Device

在我们以前的工作[1]中,报道了基于重掺硼硅片(p^+-Si)上掺Er的TiO_2(TiO_2∶Er)薄膜的TiO_2∶Er/p^+-Si异质结器件的电致发光。本文研究了TiO_2∶Er薄膜的氩(Ar)等离子体处理对TiO_2∶Er/p^+-Si异质结器件电致发光的影响。研究发现:Ar等离子体处理使TiO_2∶Er/p^+-Si异质结器件与Er3+离子相关的可见和近红外电致发光都得到了显著的增强,同时也增强了与TiO_2基体中氧空位相关的电致发光。这是由于Ar等离子体处理显著提高了TiO_2∶Er薄膜中的氧空位浓度,不但增强了与氧空位相关的电致发光,而且增强了以氧空位为敏化中心的从TiO_2基体向Er3+离子的能量传递,从而增强了Er3+离子的发光。

In our previous work, the electroluminescence （EL） from the Er-doped TiO2 （TiO2 ： Er） film on heavily boron-doped silicon （p^＋-Si） thus forming the TiO2： Er/p^＋-Si heterostructured device. In this work, the effect of argon far） plasma treatment of TiO2 ： Er film on the EL from the TiO2 ： Er/p^＋-Si heterostructured device. It is found that such Ar plasma treatment enhances not only the Er-related visible and near-infrared EL but also the oxygen-vacancy-related EL from the TiO2 host. The oxygen vacancy concentration in the TiO2 ： Er film is remarkably increased by the Ar plasma treatment, which enhances the oxygen-vacancy-related EL and, moreover, facilitates the energy transfer from the TiO2 host to the Er^3＋ ions via the oxygen vacancies that act as the sensitizers, thus leading to the enhanced Er-related EL.