300mm半导体厂含Cu废水处理工程应用

Engineering Application on Treatment of Cupriferous Wastewater in 300mm Semiconductor Factory

300 mm半导体厂含Cu废水的浓度和水量较200 mm半导体厂有明显的增加,而且越先进的制程工艺,其产生的含Cu废水处理的难度也越高。采用酵素-破络沉淀工艺处理含Cu废水,工程应用表明:在含Cu废水H_2O_2质量浓度为112~485 mg/L,总Cu质量浓度6~80 mg/L的条件下,经处理后出水H_2O_2质量浓度低于5 mg/L,总Cu质量浓度低于1 mg/L,去除率达到97%以上,总排口的总Cu质量浓度控制在0.5 mg/L以下,完全达到DB 31/374—2006《上海市半导体行业污染物排放标准》。

In 300 mm semiconductor factory, concentration and volume of cupriferous wastewater has a significant increase compare to 200 mm semiconductor factory. And the more advanced process technology, the more difficult to treat cupriferous wastewater. The results of application on treatment of cupriferous wastewater by enzyme complex breaking-sedimentation process showed that, under the condition of hydrogen peroxide concentration of cupriferous wastewater is 112 ~ 485 mg/L, total copper concentration is 6 ~ 80 mg/L, the hydrogen peroxide concentration of effluent is lower than 5 mg/L, the total copper concentration of effluent is lower than 1mg/L, copper removal rate is high than 97%, the total copper concentration of final discharge is lower than 0.5mg/L, which could meet the Discharge Standards of Pollutants for Semiconductor Industry DB 31/374 — 2006.