摘要
利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。
The c axis oriented AlN films on Si (100) substrates diameter of 6.35 cm are prepared using N 2, Ar and AlCl 3 vapour via electron cyclotron resonance plasma enhanced chemical vapor deposition. The characterization of film is investigated by means of X ray diffraction (XRD), energy dispersive X ray analysis and scanning electron morphology. The dependences of the c axis orientation of the AlN film on the microwave power, substrate temperature and N 2 flow rate are studied. High quality AlN films of large area and c axis standard deviation less than 5° are obtained.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2002年第8期933-936,共4页
Acta Optica Sinica
基金
德国夫朗和费研究院
中国科学院交流项目资助课题