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c轴定向氮化铝薄膜的制备 被引量：4

Preparation of c-Axis Oriented AlN Film
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摘要 利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。 The c axis oriented AlN films on Si (100) substrates diameter of 6.35 cm are prepared using N 2, Ar and AlCl 3 vapour via electron cyclotron resonance plasma enhanced chemical vapor deposition. The characterization of film is investigated by means of X ray diffraction (XRD), energy dispersive X ray analysis and scanning electron morphology. The dependences of the c axis orientation of the AlN film on the microwave power, substrate temperature and N 2 flow rate are studied. High quality AlN films of large area and c axis standard deviation less than 5° are obtained.
作者 龚辉 范正修
机构地区 中国科学院上海光学精密机械研究所
出处 《光学学报》 EI CAS CSCD 北大核心 2002年第8期933-936,共4页 Acta Optica Sinica
基金 德国夫朗和费研究院 中国科学院交流项目资助课题
关键词 c轴定向 制备 电子回旋共振 化学气相沉积 氮化铝薄膜 electron cyclotron resonance (ECR) chemical vapor deposition AlN film
分类号 O484.1 [理学—固体物理]
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参考文献5

  • 1Chubachi Y,Sato K,Kojima K.Reflection high energy electron diffraction and X-ray studies of AlN films grown on Si ( 111 ) and Si ( 001 ) by organometallic chemical vapour deposition[].Thin Solid films.1984
  • 2Yoshida S,Misawa S,Fujii Y et al.Reactive molecular beam epitaxy of aluminium nitride[].Journal of Vacuum Science and Technology.1979
  • 3Morita M,Isogai S,Shimizu N et al.Aluminum nitride epitaxially growth on silicon: Orientation relationships[].Japanese Journal of Applied Physics.1981
  • 4Shiosaki T,Yamamoto T,Oda T et al.Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering[].Applied Physics Letters.1980
  • 5Okano H,Takahashi Y,Tanaka T et al.Preparation of caxis oriented AlN thin films by low-temperature reactive sputtering[].Japanese Journal of Applied Physics.1992

同被引文献49

  • 1成步文,姚飞,薛春来,张建国,李传波,毛容伟,左玉华,罗丽萍,王启明.带隙法测定SiGe/Si材料的应变状态[J].物理学报,2005,54(9):4350-4353. 被引量：3
  • 2Ulrich Martin. COMD behavior of semiconductor laser diodes [R]. Annual Report 1999, Dept. of Optoelectronics, University of Ulm. , 1999, 39-46.
  • 3H. Jaeckel. Very high-power (425 mW) AlGaAs AQW- GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)[J]. IEEE J. Quantum. Electron., 1991, 27:1560.
  • 4M. Matsumoto, Mitsuhiro, SasaKi et al.. High-power 780 nm AlGaAs narrow-stripe window structure lasers with window grown on facets[J]. Japan. J. Appl. Phys., 1993, 32(5): 665.
  • 5C. Silfvenius, P. Blixt, C. Lindstrom et al.. High COMD,nitridized InAIGaAs laser facets for high reliability 50 W bar operation at 805 nm[C]. SPIE, 2004, 5336:132-143.
  • 6Xingsheng Liu, Martin Hai Hu, Hong Ky Nguyen et al.. Comparison between epi-down and epi-up bonded high-power single-mode 980 nm semieonductor lasers [J]. IEEE, Transactions on Advanced Packaging, 2004, 27(4): 640-646.
  • 7G. F. Iriarte, F. Engelmark, M. Ottosson et al.. Influence of deposition arameters on the stress of magnetron sputter-deposited AlN thin films on Si(100) substrates[J]. J. Mater. Res. , 2003, 18(2) : 423-432.
  • 8Enrique lborra, Marta Clement, Jesus Sangrador, et al. Effect of Particle Bombardment on the Orientation and the Residual Stress of Sputtered A1N films for SAW Devices [ J ]. IEEE Traasactioas on Ultrasonics, Ferroelectrics and Freqyency Control, 2004,51 ( 3 ) : 352 -358.
  • 9Six S, Gerlach J W, Rauschenbach B. Ion Beam Assisted Pulsed Laser Deposition of Epitaxial Aluminum Nitride Thin Films on Sapphire Substrates [ J ]. Surface and Coatings Technology, 2001,142-144:397-401.
  • 10Fan Z Y,Rong G,Browning J, et al. High Temperature Growth of A1N by Plasma-enhanced Molecular Beam Epitaxy[ J ]. Materials Science and Engineering, 1999, B67 : 80 -87.

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光学学报
2002年 第8期

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