期刊文献+

24 GHz CMOS功率放大器芯片设计 被引量:1

Design of 24 GHz CMOS Power Amplifier Chip
下载PDF
导出
摘要 24 GHz频段在车载雷达和无人机方面应用广泛,但面临着提高集成度、降低成本的挑战,而CMOS毫米波芯片因其成本低和易于系统集成的优点,在毫米波通信系统的应用中占据着越来越重要的地位。因此提出一种基于CMOS工艺的24 GHz功率放大器芯片的设计方法,包括24 GHz功放芯片的应用,以及有源器件的版图对其特征的影响及设计,给出了CMOS毫米波无源器件的特征及建模设计,最后对无源与有源器件进行了联合仿真,得到一个PAE为17%、Pout为10.7 d Bm的单级24 GHz功率放大器芯片。 24 GHz frequency hand is widely used in vehicular radar and unmanned aerial vehicle(UAV) , but it' s use at presentfaces the challenges of improving integration and lowering cost. The CMOS millimeter wave integrated circuit(IC) is becoming more andmore important in the application of millimeter wave communication systems because of its merit of lower costs and high system integra-tion. This paper presents a CMOS IC design of 24 GHz power amplifier, including the impact of layout design on the active deviceperformance. The approach of the whole circuit simulation with dynamic link including passive and active devices is illustrated with anexample design of 24 GHz power amplifier which achieves PAE of 17% and Pout of 10.7 dBm. This is the best performance in similarworks.
出处 《无线电通信技术》 2017年第5期82-85,共4页 Radio Communications Technology
关键词 毫米波集成电路 功率放大器 CMOS 雷达 millimeter wave integrated circuit power amplifier CMOS radar
  • 相关文献

参考文献1

二级参考文献20

  • 1MASUD M A,ZIRATH H,FERNDAHL M,et al.90 nm CMOS MMIC amplifier[C]∥2004 IEEE RFIC Symposium,2004:201-204.
  • 2ELUNGER F.26-42 GHz SOI CMOS low noise amplifier[J].IEEE J Solid-State Circuits,2004,39(3):522-528.
  • 3ELlNGER F.60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz[J].IEEE J Solid-State Circuits,2005,40(2):553.558.
  • 4DOAN C H,EMAMI S,NIKNEJAD A M,et al.Millimeter-wave CMOS design[J].IEEE J Solid-State Circuits,2005,40(1):144-155.
  • 5KOK Y L,WANC H,HUANG T W,et al.160-190 GHz monolithic low-noise amplifiers[J].Microwave Guided Wave Lett,1999,9(8):311-313.
  • 6GUAN X,HAJIMIRI A.A 24 GHz CMOS front-end[J].IEEE J Solid-State Circuits,2004,39(11):368-373.
  • 7EMAMI S,DOAN S H,NIKNEJAD A M,et al.A 60-GHz down-converting CMOS single-gate mixer[C]∥2004 IEEE RFIC Symposium,2005:163.166.
  • 8FRANCE-NETO L M,BISHOP R E,BLOECHAL B A.64GHz and 100GHz VCO's in 90 nm CMOS using optimum pumping method[C]∥IEEE ISSCC Dig Tech Papers,2004:444-445.
  • 9BSIM3V3 MOSFET model[EB/OL].http:∥www.device.eecs.berkeley.edu/~bsim3.
  • 10MOS9 MOSFET model[EB/OL].http:∥www.semiconductors.philips.com/philips_models/rues_models/model9/index.html.

共引文献1

同被引文献4

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部