半导体红外量子点发展现状与前景

Status and outlook of infrared semiconductor quantum dots

半导体量子点具有独特的光学与电学性质,特别是红外量子点良好的光稳定性和生物相容性等优点使其在光电器件、生物医学等领域受到广泛关注。综述了吸收或发射光谱位于红外波段的量子点在激光、能源、光电探测以及生物医学等方面的应用现状与前景,归纳了适用于红外量子点材料的制备方法,并对比了不同方法在应用中的优势。半导体红外量子点材料选择丰富、应用形式多样:InAs量子点被动锁模激光器在1.3μm波长处产生7.3GHz的近衍射极限脉冲输出;InAs/GaAs量子点双波长激光器可泵浦产生0.6nW的THz波;PbS量子点掺杂光纤放大器可在1.53μm中心波长处实现10.5dB光增益,带宽160nm;CdSeTe量子点敏化太阳能电池、异质结Si基量子点太阳能电池的总转换效率可达8%和14.8%;胶质HgTe量子点制成的量子点红外探测器(QDIP)可实现3μm^5μm中波红外探测,Ge/Si量子点可实现3μm^7μm红外探测;CdTe/ZnSe核壳量子点可用于检测DNA序列的损伤与突变。半导体红外量子点上述应用形式的发展,将进一步促进红外光电系统向高效、快速、大规模集成的方向演进,也将极大地促进临床医学中活体成像检测的应用推广。

Semiconductor quantum dots have unique optical and electrical properties. Especially the infrared quantum dots（QDs） , of which the good optical stability and biocompatibility, make them attractive in fields of photoelectric devices, biological medicine and etc. We summarized the status and outlook of the infrared quantum dots of absorption or emission spectra in applications of laser, energy, photoelectric detection and biomedicine, summed up the preparation methods suitable for infrared quantum dots and compared their respective advantages in applications. There are rich material selections and application forms for the infrared semiconductor QDs. InAs QDs passive mode-locked laser can generate 7. 3 GHz near-diffraction limit pulses at 1. 3 μm wavelength. InAs/GaAs QDs dual-wavelengtlaser can be used as pump to generate 0. 6 nW THz wave. PbS QDs doped fiber amplifier can realize 10. 5 dB optical gain at 1. 53 pm central wavelength with a bandwidth of 160 nm. CdSeTe QDs sensitized solar cells and Si he terojunction QDs solar cells can achieve a total conversion efficiency of 8 % and 14. 8 % , respectively. Colloidal HgTe quantum dot infrared photodetector （QDIP） can achieve 3 μm-5 μm medium wave detection while Ge/Si QDIP can realize 3μm-7μm infrared detection. CdTe/ZnSe core-shell QDs can be used for the detection of DNA damage and mutation. The development of the applications mentioned above for the infrared semiconductor quantum dots can further pro-mote the infrared optoelectronic systems to develop toward the direction of efficient, fast and large scale integration and can also greatly promote the popularization of in vivo imaging detection in clinical medicine.