溅射气压对碳硅氧薄膜透过率及光学带隙的影响

Effect of Sputtering Pressure on Transmittance and Optical Band Gap of Silicon Oxycarbide Thin Films

采用射频磁控溅射技术在玻璃基底和单晶硅片(100)上制备了碳硅氧(Si OC)薄膜,通过扫描电镜、X射线衍射、拉曼光谱、X射线光电子能谱及紫外可见透射光谱等技术手段对其进行了分析,研究了在不同溅射气压下所制备薄膜的组分、透过率及光学带隙。结果表明:随着溅射气压的增大,薄膜内部sp^3键含量、透过率及光学带隙均随之增大,sp^3键及其形成的宽带隙σ键对薄膜光学带隙有着较大影响。在溅射气压为3.0 Pa的条件下,薄膜光学带隙为2.67 e V。

Silicon oxycarbide（SiOC） thin films were fabricated on Si（100） and glass substrates by radio frequency（ RF） magnetron sputtering technique. They were also characterized by scanning electron microscope（ SEM）,X-ray diffraction,Raman spectroscopy,X-ray photoelectron spectroscopy as well as UV-Vis spectroscopy. The component,transmittance and optical band gap of the films deposited under different sputtering pressures were also studied. The results show inside of thin films,the component of sp^3 band,transmittance and optical band gap both increase follow the sputtering pressure＇s increase. The sp^3 band and its wide gap σ band have a great influence on the optical band gap of films which is 2. 67 eV when the sputtering pressure equal 3.0 Pa.