一种新型SiC SBD的高温反向恢复特性

A Novel SiC SBD with Reverse Recovery Characteristics in High Temperature Environment

与传统硅基功率二极管相比,碳化硅肖特基势垒二极管(SiC SBD)可提高开关频率并大幅减小开关损耗,同时有更高的耐压范围。设计并制作了具有场限环结终端和Ti肖特基接触的1.2 kV/30 A SiC SBD器件,研究了该SiC SBD在100~300℃时的反向恢复特性。实验结果表明,温度每上升100℃,SiC SBD反向电压峰值增幅为5%左右,而反向恢复电流与反向恢复时间受温度影响不大;温度每升高50℃,反向恢复损耗功率峰值降低5%。实验结果表明该SiC SBD在高温下能够稳定工作,且具有良好的反向恢复特性,适用于卫星、航空和航天探测、石油以及地热钻井探测等需要大功率、耐高温和高速器件的领域。

Compared with conventional silicon-based power diodes,silicon carbide Schottky barrier diodes（ SiC SBD） have advantages in high switching frequency and low switching loss, as well as higher operation voltage range. The 1. 2 k V/30 A SiC SBD device with field limiting rings terminals and Ti Schottky contact was designed and fabricated. The reverse recovery characteristics of the SiC SBD at100-300 ℃ were studied. The experiment results show that the peak value of the reverse voltage increases by about 5% as temperature increases each 100 ℃,while the reverse recovery current and the reverse recovery time are not affected by the temperature significantly. The peak value of the reverse recovery power loss reduces by 5% as temperature increases each 50 ℃. These experimental results demonstrate that the SiC SBD can work stably under high temperature with good reverse recovery characteristics,showing the great potentials in the fields of high power,high temperature resistance and high speed devices for satellite,aviation and space exploration,oil and geothermal drilling exploration and so on.