摘要
In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET （TGMC-LDMOS） on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate results in the formation of two channels in the p-body region of the device. The drain metal is also placed in a trench to take contact from the n^＋-InGaAs region located over the substrate. In a cell length of 5μm, the TGMC-LDMOS structure has seven channels, which conduct simultaneously to carry drain current in parallel. The formation of multi-channels in the proposed device increases the drive current （ID） leading to a large reduction in the specific on-resistance （Ron-sp）. Due to better control of gates on the drain current, the new structure exhibits substantially higher transconductance （gm） resulting in significant improvement in cut-off frequency （fz） and oscillation frequency （fmax）. Using two-dimensional numerical simulations, a 55 V TGMC- LDMOS is demonstrated to achieve 7 times higher Io, 6.2 times lower Ron-sp, 6.3 times higher peak gm, 2.6 times higher fT, and 2.5 times increase in fmax in comparison to a conventional device for the identical cell length.
In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET （TGMC-LDMOS） on InGaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate results in the formation of two channels in the p-body region of the device. The drain metal is also placed in a trench to take contact from the n^＋-InGaAs region located over the substrate. In a cell length of 5μm, the TGMC-LDMOS structure has seven channels, which conduct simultaneously to carry drain current in parallel. The formation of multi-channels in the proposed device increases the drive current （ID） leading to a large reduction in the specific on-resistance （Ron-sp）. Due to better control of gates on the drain current, the new structure exhibits substantially higher transconductance （gm） resulting in significant improvement in cut-off frequency （fz） and oscillation frequency （fmax）. Using two-dimensional numerical simulations, a 55 V TGMC- LDMOS is demonstrated to achieve 7 times higher Io, 6.2 times lower Ron-sp, 6.3 times higher peak gm, 2.6 times higher fT, and 2.5 times increase in fmax in comparison to a conventional device for the identical cell length.
