BSIM射频模型综述

An Introduction of BSIM MOSFET Modeling for RF IC

CMOS集成电路技术的进一步发展和不断出现的新技术要求模型研究人员持续改进和增强VLSI电路设计和模拟的集约模型。美国Berkeley加州大学的BSIM团队对业界标准芯片仿真物理模型BSIM进行了不断的改进与开发。主要介绍BSIM系列模型在RF应用方面的改进。相对于BSIM3v3,BSIM4添加了更多真实器件效应,BSIM5和BSIM6是为了满足射频(RF)和高速CMOS电路模拟要求而发展的新一代物理基础的BSIM模型,具有对称、连续和参数少的特点。BSIM6可用于低压低功耗的RF和模拟设计。

The continued development of CMOS technology and the emergence of new application demand continued and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley. BSIM4 enhances many real-device effects compared to BSIM3v3. BSIM5 and BSIM6 are the latest MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. BSIM6 is used for low-power analog and RF CMOS design.