期刊文献+

Cu(In,Ga)Se2 absorbers prepared by electrodeposition for low-cost thin-film solar cells 被引量:1

Cu(In,Ga)Se_2 absorbers prepared by electrodeposition for low-cost thin-film solar cells
原文传递
导出
摘要 Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production. In this study, about 1-μm-thick Cu(In,Ga)Se2(CIGS) precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent, and all parameters of electrodeposition were precisely controlled.After that, the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates(60 and 600℃·min^(-1)). High-quality CIGS films were obtained, and their characteristics were investigated by X-ray fluorescence, scanning electron microscopy, energydispersive spectroscopy, X-ray diffraction, Raman spectra and near-infrared-visible(NIR-Vis) spectra. The results reveal that there are many differences between the properties of the films under different heating rates. Finally,CIGS solar cells were fabricated using a fast and a slow heating rate. The maximum efficiencies achieved for the films selenized at 60 and 600℃-min^(-1) are 3.15% and 0.71%, respectively. Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production. In this study, about 1-μm-thick Cu(In,Ga)Se2(CIGS) precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent, and all parameters of electrodeposition were precisely controlled.After that, the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates(60 and 600℃·min^(-1)). High-quality CIGS films were obtained, and their characteristics were investigated by X-ray fluorescence, scanning electron microscopy, energydispersive spectroscopy, X-ray diffraction, Raman spectra and near-infrared-visible(NIR-Vis) spectra. The results reveal that there are many differences between the properties of the films under different heating rates. Finally,CIGS solar cells were fabricated using a fast and a slow heating rate. The maximum efficiencies achieved for the films selenized at 60 and 600℃-min^(-1) are 3.15% and 0.71%, respectively.
机构地区 College of Science
出处 《Rare Metals》 SCIE EI CAS CSCD 2017年第9期729-736,共8页 稀有金属(英文版)
基金 financially supported by the National High Technology Research and Development Program of China(No.2015AA034201) the National Natural Science Foundation of China(No.11474355) the Chinese Universities Scientific Fund(No.2017LX002)
关键词 Cu(In Ga)Se2 Thin films ELECTRODEPOSITION SELENIZATION Heating rates Cu(In,Ga)Se2 Thin films Electrodeposition Selenization Heating rates
  • 相关文献

二级参考文献15

  • 1J. Keller,R. Schlesiger,I. Riedel,J. Parisi,G. Schmitz,A. Avellan,T. Dalibor.Grain boundary investigations on sulfurized Cu(In,Ga)(S,Se) 2 solar cells using atom probe tomography[J]. Solar Energy Materials and Solar Cells . 2013
  • 2Robert Baier,Jascha Lehmann,Sebastian Lehmann,Thorsten Rissom,Christian Alexander Kaufmann,Alex Schwarzmann,Yossi Rosenwaks,Martha Ch. Lux-Steiner,Sascha Sadewasser.Electronic properties of grain boundaries in Cu(In,Ga)Se 2 thin films with various Ga-contents[J]. Solar Energy Materials and Solar Cells . 2012
  • 3S. Sadewasser,D. Abou-Ras,D. Azulay,R. Baier,I. Balberg,D. Cahen,S. Cohen,K. Gartsman,K. Ganesan,J. Kavalakkatt,W. Li,O. Millo,Th. Rissom,Y. Rosenwaks,H.-W. Schock,A. Schwarzman,T. Unold.Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se 2[J]. Thin Solid Films . 2011 (21)
  • 4Su-Huai Wei,S.B. Zhang.Defect properties of CuInSe 2 and CuGaSe 2[J]. Journal of Physics and Chemistry of Solids . 2005 (11)
  • 5H. Du,C.H. Champness,I. Shih.Results on monocrystalline CuInSe 2 solar cells[J]. Thin Solid Films . 2004
  • 6Seto J Y.The electrical properties of polycrystalline silicon films. Journal of Appl Phys . 1975
  • 7Persson, Clas,Zunger, Alex.Anomalous Grain Boundary Physics in Polycrystalline CuInSe 2 : The Existence of a Hole Barrier. Physical Review Letters;Letters . 2003
  • 8Siebentritt Susanne,Sadewasser Sascha,Wimmer Mark,Leendertz Caspar,Eisenbarth Tobias,Lux-Steiner Martha Ch.Evidence for a neutral grain-boundary barrier in chalcopyrites. Physical Review . 2006
  • 9Yan Yanfa,Noufi R,Al-Jassim M M.Grain-boundary physics in polycrystalline CuInSe2 revisited: experiment and theory. Physical Review . 2006
  • 10C Lei,C M Li,A Rockett,I M Robertson.Grain boundary compositions in Cu(InGa)Se{sub 2}. Journal of Applied Physics . 2007

共引文献2

同被引文献4

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部