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磁控溅射参数对SrTiO_3基片上沉积YIG薄膜微观结构和磁性能的影响

Micro-structural and magnetic characteristics of YIG thin film prepared on SrTiO_3 substrates by RF-magnetron sputtering
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摘要 采用射频磁控溅射法在SrTiO_3衬底上制备YIG薄膜,基于薄膜的成核理论研究溅射参数对薄膜结晶性、表面形貌和磁性的影响。结果表明,在其他溅射参数不变的情况下,薄膜的厚度随溅射时间成正比增长;在衬底温度为500℃、溅射气压为1Pa时,YIG薄膜表面较致密,晶粒大小均匀;沉积薄膜的化学组分受氧分压的影响较大,与靶材成分相比有一定偏差。溅射气体为纯氩气时,YIG薄膜的化学组分与靶材化学计量比接近,制备的YIG薄膜中存在一定量的Fe2+和氧空位;当退火温度为750℃时,在氧气中热处理40 min,形成纯的YIG相,饱和磁化强度为134emu/cm3。 YIG thin films were deposited on SrTiO3 substrate by an RF-magnetron sputtering. The crystallization, surface morphology and magnetic property of the thin films were investigated based on the sputtering parameters. The results showed that the film thickness increases in a linear relationship with sputtering time. The YIG film with compact surface and uniform crystalline grains was obtained at deposition temperature of 500 ℃ and sputtering pressure of 1 Pa. The chemical stoichiometry compared with the target material composition has a certain deviation which is relative to the oxygen fraction in sputtering gas. It is shown that O2/Ar ratio of 0:10 is the best condition to form a stoichiometrie YIG film. There are Fe^2+ and oxygen vacancies in the deposited film. Pure phase YIG thin film was obtained with high saturation magnetization (Mn) of 134 emu/cm^3 after heat treatment in oxygen atmosphere at 750 ℃ for 40 min.
出处 《陕西师范大学学报(自然科学版)》 CAS CSCD 北大核心 2017年第5期23-29,共7页 Journal of Shaanxi Normal University:Natural Science Edition
基金 国家自然科学基金(51372148)
关键词 射频磁控溅射 YIG薄膜 溅射参数 表面形貌 微观结构 磁性能 RF-magnetron sputtering YIG thin film sputtering parameters surface morphology micro-structure magnetic property
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  • 1曹博,包良满,李公平,何山虎.Cu/SiO_2/Si(111)体系中Cu和Si的扩散及界面反应[J].物理学报,2006,55(12):6550-6555. 被引量:8
  • 2K Wasa, M Kitabatake,H Adachi. Thin Film Materials Technology : Sputtering of compund materials [ M ]. Norwich : William Andrew, Inc ,2004.
  • 3M Kitabatake, K Wasa. Growth of Diamond at Room Termpemture by an Ion - beam Sputter Deposition under Hydrogen - ion Bombardment[ J]. J. Appl. Phys, 1985 (58) : 1693.
  • 4R, Beyers,R Sinclair. Metastable Phase Formation in Titanium - Silicon Thin - Film[ J]. J. Appl. Phys, 1985 (57) :5240.
  • 5K Yamagucbi, A Heya, K Shimura et al. Effect of Target Compositions on The Crystallinity of β - FeSi2 Prepared by Ion Beam Sputter Deposition Method[ J]. Thin Solid Films,2004(461 ) :17.
  • 6Jinmin Zhang, Quan Xie, Ping Yu et al. The Preparation of α - FeSi2 by Laser Annealing [ J ]. Thin Solid Films, 2008 ( 516 ) : 8624.
  • 7[1]Toshihiro Shintaku, Takehiko Uno. Preparation of Ce-substituted yttrium iron garnet films for magneto-optic waveguide devices[J]. Jpn J Appl Phys; 1996, 35(9A): 1689-4691.
  • 8[3]Kawachi M. Silica waveguides on silicon and their application to integrated-optic components[J]. Opt. Quantum Electron, 1990, 22(5): 391-416.
  • 9[4]Yamada H, Yamada M, Terui H, et al. Optical interconnections using a silica-based optical waveguide on a silicon substrate[J]. Opt. Eng., 1989, 28(12): 128-1289.
  • 10[5]Sugimoto N, Terui H, Tate A, et al. A hybridintegrated waveguide isolator on a silica-based plannar lightwave circuit[J]. Lightwave Technol., 1996, 14(11): 2537-2546.

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