期刊文献+

光配向制程参数对预倾角及其光电性能的影响 被引量:1

Effects of photo-alignment process parameters on pre-tilt angle and photoelectric properties
下载PDF
导出
摘要 为了满足市场对LCD面板高对比度、高画质的需求,光配向作为一种非接触式的新型配向方法正被广泛研究。本文采用光裂解型聚酰亚胺取向材料制备得到IPS型测试液晶盒,并针对光配向成膜条件与其所形成的光电效应进行研究。通过FT-IR、AFM、偏光板角度测试机等仪器对不同pre-bake和post-bake温度和时间下的测试盒的预倾角及光电特性进行了表征。结果显示,pre-bake、post-bake的温度和时间与预倾角、穿透率、对比度和电压保持率均存在一定的相关性。本文的研究可以为后人对光配向制程相关参数的优化提供借鉴。 In order to meet the requirement of the market for LCD panePs high contrast and high image qual- ity, photo-alignment as a new type of non-contact alignment method is being widely studied. An IPS test cell was prepared by using an alignment material of photo-decomposition type polyimide, then film forming condi- tions and photoelectric effect of the cell were researched. Pre-tilt angle and photoelectric properties at different temperature and time of pre-bake and post-bake were characterized by FT-IR, AFM, Polarizing plate angle tester, etc. Results showed that temperature and time of pre-bake and post-bake had some relationship with pre-tilt angle, transmittance, contrast ratio and VHR. In this paper, the research could serve as a reference to the optimization of photo-alignment process parameters.
出处 《液晶与显示》 CAS CSCD 北大核心 2017年第9期708-713,共6页 Chinese Journal of Liquid Crystals and Displays
关键词 IPS-LCD 聚酰亚胺 光配向 水平取向膜 制程参数 IPS-LCD polyimide photo-alignment horizontal alignment layer process parameters
  • 相关文献

参考文献2

二级参考文献19

  • 1Kenneth A.Dean,Jean Dijon,杜秉初.用于大面积显示的低成本纳米管场发射显示器[J].现代显示,2004(4):4-6. 被引量:5
  • 2王小菊,林祖伦,祈康成.场发射显示器阴极的制备方法及研究现状[J].现代显示,2005(3):46-50. 被引量:9
  • 3邓江,林祖伦,张义德.场发射显示器研究现状[J].现代显示,2005(4):8-11. 被引量:9
  • 4Park J H, Moon J S, Han J H, Yoo J B, et al. Effects of binders and organic vehicles on the emission properties of carbon nanotube paste [J]. Diamond & Related Materials, 2005, (14):1463 - 1468.
  • 5Tae Joo Park, Doo Seok Jeong, Cheol Seong Hwang, et al. Fabrication of ultrathin IrO2 top electrode for improving thermal stability of metal-insulator-metal field emission cathodes [J].Thin Solid Films,2005, (471):236- 242.
  • 6Francis Charbonnier. Developing and using the field emitter as a high intensity electron source [J]. Applied Surface Science, 1996, 94/95, 26-43.
  • 7Spindt C A,Holland C E et al. Field emitter arrays for vacuum microelectronics [J]. IEEE Trans. Electron Devices, 1991,38(10):2355-2362.
  • 8Dean K A, Trujillo J,Xie C G, et al. Motorolar spindt tip FEDs operating for 10000 hours[J]. Proceeding of the 14th international, 2001, (8): 181-182.
  • 9Marcus R B. Formation of silicon tips with <1nm radius [J]. Appl Phys Lett,1990,56(3): 236-237.
  • 10Koenigsfeld N, Philosoph B, Kalish R. Field emission controlled by the substrate/CVD diamond interface [J]. Diamond and Relat. Mater, 2000, (9):1218-1221.

共引文献7

同被引文献2

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部