摘要
直流断路器是高压直流输电系统换流站的主要电气设备之一。作为直流断路器中关键部件,压接型IGBT(insulated gate bipolar transistor)的电学性能及可靠性尤为重要。基于直流断路器的特性需求,开发出一款具有高关断能力的3 300 V压接式IGBT芯片。该芯片具有良好的开关特性、短路特性及坚固性,可通过8倍额定电流关断测试,且与自主研制的FRD芯片有良好的匹配性;基于此芯片研制的高关断压接型IGBT模块已通过仿工况关断能力测试。
DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT （insulated gate bipolar transistor） are particularly important. Based on the demand characteristics of DC breakers, a 3 300 V IGBT chip with high turn-off capability was developed. The chip has excellent switching characteristics, short circuit characteristics and good ruggedness, and can pass shut-off 8X lc. It has a good compatibility with independently developed FRD chip. The IGBT module of high turn-off capability which was developed based on this chip, passed the turn-off capability test under simulated working conditions.
出处
《大功率变流技术》
2017年第5期70-73,88,共5页
HIGH POWER CONVERTER TECHNOLOGY
基金
国家重点研发计划(2016YFB0901802)
北京市优秀人才培养资助基金(2015000102592G284)
