摘要
介绍了ICPE法工艺的基本原理及其设备的基本结构。分析了影响ICP工艺刻蚀速率的主要因素。根据多年维修经验,分析总结了ICP设备常见故障现象并给出了相应的解决方法。
This paper introduces the basic principle of the ICP process and the basic structure of the equipment. Analyzes the main factors influencing the ICP process etching rate. According to many years of experience in maintenance, analysis and summarizes the ICP equipment common fault phenomenon and gives the corresponding solutions.
作者
雷宇
LEI Yu(The 13th Research Institute of CETC, Shijiazhuang 050051, China)
出处
《电子工业专用设备》
2017年第5期59-62,共4页
Equipment for Electronic Products Manufacturing
关键词
感应耦合等离子体
干法刻蚀
故障分析
ICP（Inductively coupled plasma ）
Dry etching
Fault diagnosis
