碳化硅MOSFET行为建模方法

Behavior Modeling Methodology of SiC MOSFET

针对传统建模方法较复杂的问题,提出一种碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)行为建模的方法。用一组简单方程描述了SiC MOSFET的静态特性并考虑了其温度特性,对两个主要的寄生电容采用了非线性拟合的方法。叙述了模型的构成和实现,与传统方法相比,建模过程中所有参数均基于数据手册,无需进行额外的实验和测试,极大地降低了建模难度。双脉冲测试结果表明模型具有很高的精度。

A behavior modeling methodology of silicon carbide（SiC） metal-oxide-semiconductor rid＆effect transistor（MO- SFET） is proposed.A set of simple equations is used to describe the static characteristics of SiC MOSFET,in which the effect of temperature has been considered.Two main parasitic capacitances which domain the switching characteristics are modeled using nonlinear equations.The composition and implementation of the proposed model are discussed.Compared with traditional modeling ways,in which complicated experiments or tests are often needed,the parameters of the proposed model are extracted merely from datasheet,which drastically reduce the difficulty of modeling.Double-pulse test results verify the validation of the proposed model.