摘要
宽禁带器件碳化硅(SiC)半导体耐压高、开关速度快、损耗低,在逆变电源朝着小型化、轻量化和高效率的发展趋势中具有良好的应用前景。对SiC MOSFET性能及双降压式半桥逆变器(DBHBI)的工作原理、参数设计及损耗模型进行了理论分析与实验研究,比较其与Si IGBT逆变器的效率。搭建一台1 kW实验样机进行测试,开关频率100 kHz下最高效率达到96.28%。
Wide band gap semiconductor silicon carbide （SIC） has the characteristics of high voltage, fast switching speed,low loss.And it has a good application prospect in the development trend of miniaturization,light weight and high efficiency.SiC MOSFET performance ,working principle, parameter design and loss model of dual Buck half- bridge inverter（DBHBI） are analyzed theoretically and experimentally.The efficiency of SiC DBHBI is compared with that of Si.And a 1 kW experimental prototype is built to test the model.The maximum efficiency is 96.28% when the switching frequency is 100 kHz.
作者
卢志钢
林琼斌
王武
陈佳桥
LU Zhi-gang LIN Qiong-bin WANG Wu CHEN Jia-qiao(Fuzhou University, Fuzhou 350116, China)
出处
《电力电子技术》
CSCD
北大核心
2017年第9期45-47,共3页
Power Electronics
关键词
宽禁带器件
碳化硅
逆变器
wide band gap semiconductor
silicon carbide
inverter
