摘要
为解决大功率高频串联谐振逆变器中多管并联碳化硅(SiC)金属-氧化物半导体场效应晶体管(MOSFET)驱动电路存在的串扰问题,分析了驱动电路串扰问题产生的机理和常用驱动串扰抑制方法,优化了驱动电路结构和器件参数,设计了一种具有串扰抑制作用的多管并联SiC MOSFET驱动电路。搭建了一台SiC MOSFET高频H桥串联谐振逆变电源样机,对驱动电路进行了相关测试,验证了所设计的驱动电路可有效抑制串扰。
Due to the crosstalk problem of the multi-devices parallel silicon carbide (SIC) metal oxide semiconductor field effect transistor(MOSFET) drive circuit in the high power and high frequency series resonant inverter,a new kind of multi-devices parallel SiC MOSFET drive circuit with crosstalk suppression is designed, to optimize the drive circuit structure and device parameters.A power supply prototype of the high power high frequency H-bridge series resonant inverter is built, the drive circuit of the prototype is tested to verify that the design is effective in the erosstalk suppression.
作者
柴艳鹏
李亚斌
刘永飞
安国亮
CHAI Yan-peng LI Ya-bin LIU Yong-fei AN Guo-liang(Baoding Sifang Sanyi Electric Co., Ltd., Baoding 071023, China)
出处
《电力电子技术》
CSCD
北大核心
2017年第9期57-59,共3页
Power Electronics
基金
河北省重大科技成果转化项目(15044503Z)~~
关键词
晶体管
多管并联
驱动电路
串扰抑制
transistor
multi-devices parallel
drive circuit
erosstalk suppression