摘要
文章介绍了一种基于带隙基准电压(Band-gap Voltage)技术的高稳定度基准电路.通过使用温度补偿和负反馈运放网络技术,优化了电路结构,提高了基准电路的综合性能.实际测试结果表明,温度在28~120℃范围变化时,所设计带隙基准电路电压源的温度特性为±20 ppm/℃,电流源输出电流误差小于±1.8%.在0.18μm工艺下电路版图面积为180μm×200μm,1.8V工作电压时功耗仅为140μW.
A band-gap voltage reference circuit with high stability is introduced in this paper. By using temperature compensation and network of operational amplifier negative feedback, a new structure with better performance is achieved. Experiment results show that the temperature property of the optimized voltage source is ±20 ppm/℃, and its reference current source with less than ±1.8% change from 28℃ to 120℃. The chip area is 180 μm×200 μm in the 0.18 μm process, and the power consumption is only 140 μW in 1.8V operating voltage.
出处
《深圳职业技术学院学报》
CAS
2017年第5期17-20,共4页
Journal of Shenzhen Polytechnic
基金
国家自然科学基金资助项目(U1201256
61201042)
广东省高等职业教育品牌专业建设项目(编号:9004-02160101)
深圳职业技术学院精品资源共享课建设项目(编号:9003-04160414)
关键词
基准电路
带隙基准电压
电压源
电流源
reference circuit
band-gap voltage
voltage source
current source
