SiC电力电子器件研究现状及新进展

Research Status and New Progress of SiC Power Electronic Devices

由于硅材料本身的限制,传统硅电力电子器件性能已经接近其极限,碳化硅(SiC)器件的高功率、高效率、耐高温、抗辐照等优势逐渐突显,成为电力电子器件一个新的发展方向。综述了SiC材料、SiC电力电子器件、SiC模块及关键工艺的研究现状,重点从材料、器件结构、制备工艺等方面阐述了SiC二极管、金属氧化物半导体场效应晶体管(MOSFET)、结晶型场效应晶体管(JFET)、双极结型晶体管(BJT)、绝缘栅双极晶体管(IGBT)及模块的研究进展。概述了SiC材料、SiC电力电子器件及模块的商品化情况,最后对SiC材料及器件的发展趋势进行了展望。

Due to the self-restriction of silicon materials,the performance of the traditional silicon power electronic devices has approached its limits.Silicon carbide（ SiC） devices are becoming more and more prominent with their high power,high efficiency,high temperature resistance and radiation resistance,and become a new development direction for power electronic devices.The research status of SiC materials,SiC power electronic devices,SiC modules and the key processes are reviewed.The research progress of SiC diodes,metal oxide semiconductor field effect transistors（ MOSFETs）,junction field effect transistors（ JFETs）,bipolar junction transistors（ BJTs）,insulated gate bipolar transistors（ IGBTs） and modules is expounded from the aspects of material,device structure,preparation technology and so on.The commercialization of SiC materials,SiC power electronic devices and modules is summarized.Finally,the development trend of SiC materials and electronic devices is prospected.