摘要
采用传统固相反应法制备出Li^+和Na^+掺杂的(Ba_(1–x)Ca_x)(Zr_yTi_(1–-y))O_3(BCTZ)介电陶瓷材料,研究了助烧剂(Li^+和Na^+)在不同预烧和烧结温度下对BCTZ陶瓷材料相结构、介电性能和耐压特性的影响。结果表明:通过Li^+和Na^+的掺杂,BCTZ陶瓷材料均为纯钙钛矿结构,Li^+掺杂BCTZ陶瓷材料的最佳预烧温度为1250℃,烧结温度为1135℃,所得材料的相对介电常数εr为1051,介质损耗tanδ为2×10^(–4),直流击穿电压V_(DC)为15.5×10~3 V/mm,交流击穿电压V_(AC)为11.0×103 V/mm;Na^+掺杂BCTZ陶瓷材料的最佳预烧温度为1120℃,烧结温度为1135℃,所得材料的εr为1063,tanδ为4×10^(–4),V_(DC)为15.2×10~3 V/mm,V_(AC)为10.1×10~3 V/mm。
The Li+ and Na+ doped (Ba1_xCax)(ZryTi1-y)O3 (BCTZ) ceramics were prepared by using the conventional solid-state method. The effects of the sintering aids (Li+ and Na+) at different presintering and sintering temperatures on phase structure, dielectric properties and voltage properties of BCTZ ceramic materials were investigated. The results indicate that BCTZ ceramics are pure perovskite structure after the modification of Li+ and Na+. Moreover, when the optimum presintering temperature and sintering temperature of Li+ doped BCTZ ceramics are 1250 ℃and 1135 ℃, the relative permittivity er, dielectric loss tanS, breakdown voltage VDc and VAC of the material are found to be 1051, 2×10-4, 15.5 ×103 Wmm and 11.0x 103 Wmm, respectively. While the optimum presintefing temperature and sintering temperature of Na+ doped BCTZ ceramics are 1120 ℃ and 1135℃, the εr, tanδ, VDC and VAC of the material are found to be 1063, 4 ×10-4, 15.2 × 103 V/mm and 10.1× 103 V/mm, respectively.
作者
李文兴
韩阿敏
魏青峰
LI Wenxing HAN Amin WEI Qingfeng(Shaanxi Huaxing Electronic Development Co., Ltd, Xianyang 712099, Shaanxi Province, China)
出处
《电子元件与材料》
CAS
CSCD
2017年第10期19-26,共8页
Electronic Components And Materials
基金
陕西省咸阳市2012年科技计划项目资助(No.2012 K01-18)
陕西省工业和信息化厅2015年流贷贴息项目资助(No.陕工信发(2015)第503号)
关键词
中低温烧结
BCTZ
Li^+和Na^+掺杂
钙钛矿结构
介电性能
超高耐压
middle-low temperature sintering
BCZT
Li+ and Na+ doping
perovskite structure
dielectric properties
ultra-high voltage properties