波段内外连续激光对单结GaAs太阳电池辐照效应研究

Irradiation Effects of Single Junction GaAs Solar Cells Induced by In-Band and Out-of-Band CW Lasers

在激光耦合强度、辐照面积和辐照时间对应相同的条件下,对单结GaAs太阳电池分别开展了波段内808nm、波段外1 070nm连续激光单独辐照以及两者联合辐照实验,发现三种辐照方式对应的样品损伤程度十分接近。结合等效电路输出的I-V曲线随太阳电池参数的变化、电致发光图像及小光斑激光响应扫描测试结果对损伤机理进行了分析。结果表明:激光辐照导致太阳电池损伤的实质是PN结内缺陷增多。

With the same laser coupling intensity,three types of laser irradiating experiments on single junction GaAs solar cell are carried out,which are irradiated by in-band（808nm）and out-of-band（1 070nm）CW lasers respectively and simultaneously.The experiment results show that the damage degrees of solar cells under three different conditions are approximately identical.The damage mechanisms are studied from three aspects：output changes of solar cell equivalent circuit under different configuration settings,comparison of electroluminescence images before and after laser irradiation,and intensity distribution of light beam induced by power after laser irradiation.It is concluded that the increase of PN junction defects causes the performance degradation of solar cell.