具有择优取向的GaN粉末的制备与性能研究

Research on preparation and performance of Gallium nitride powder with preferred orientation

采用管式炉通以流动氨气煅烧β-Ga_2O_3的方法制备六方纤锌矿GaN,利用XRD,SEM,TEM对所制备的Ga N的结构、形貌进行表征和分析,使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明,GaN具有(002)择优取向,其颗粒外形和尺寸均与原料相似,系由几十纳米的晶片团聚而成的棒状颗粒所组成;GaN的近带边发射峰为346 nm(3.584 eV),相比较块材的近带边发射峰有19 nm(187 meV)的蓝移.

The hexagonal wurtzite Gallium nitride（GaN） was prepared by calcining β gallium oxide（β-Ga_2O_3）in flowing ammonia.The XRD,SEM and TEM were employed to investigate the structure and morphology.The photoluminescence（PL） spectroscopy was used to collect photoluminescence spectroscopy of GaN perform the luminous property.The measurement results revealed that the obtained GaN had preferred orientation of（002）,and the rod shape and grain size of GaN powders were similar to those of raw gallium oxide which were agglomerates of tens nanometers flake crystallites.The near-edge emission at 346 nm（3.584 eV） of Gallium nitride powders had a blue shift of 19 nm（187 meV） than that of bulk GaN material.