一种高线性低噪声CMOS混频器设计

Design of a high-linear and low-noise CMOS mixer

混频器应用在多标准领域中,对混频器的线性度和噪声性能提出了严格的要求。文中提出了一种新型的高线性、低噪声CMOS混频器。该混频器同时采用了三阶失真抵消技术和噪声抵消技术。采用TSMC 0.13μm CMOS工艺进行设计并流片实现,测试结果表明,较之传统的吉尔伯特混频器而言,文中混频器的输入三阶交调点IIP3增加了6.18d Bm,噪声系数下降了3.5d B,而用于三阶失真抵消技术和噪声抵消技术的电路部分仅使混频器多消耗了0.85m A的电流。

The linearity and noise requirements in multistandard applications make the design of mixers so challenging. In this paper a new high-linear and low-noise CMOS mixer is proposed that utilizes thirdorder distortion cancellation technology and noise cancellation technology. The implementation using TSMC 0. 13μm CMOS technology demonstrated that IIP3 and noise figure of the proposed mixer have6. 18 d Bm and 3. 5 d B improvements in comparison with the conventional Gilbert-type mixer while the additional circuits used for the third-order distortion and noise cancellation mechanisms have a total current consumption of 0. 85 m A.