1200V/36 A SiC MOSFET短路特性的实验研究

Experimental Study of Short-circuit Characteristics of 1200 V/36 A SiC MOSFET

短路能力是衡量功率半导体器件(IGBT、SiC MOSFET等)性能的重要指标,然而SiC MOSFET的短路性能还没有得到充分的研究。为掌握SiC MOSFET在短路工况下的特性,设计一套SiC MOSFET非破坏性短路测试实验平台,从短路脉冲宽度、栅源极电压UGS、栅极电阻RG、漏源极电压UDS、杂散电感LS、壳温度TCASE等方面对1 200 V/36 A SiC MOSFET的短路特性进行全参数实验,综合评估和分析SiC MOSFET器件在不同参数下发生短路的开关瞬态特性。

Short-circuit capability is an important indicator for measuring the performance of power semiconductor devices（IGBTs,SiC MOSFETs,etc）.However,the short-circuit characteristics of SiC MOSFETs have not been fully studied.In order to understand the characteristics of SiC MOSFET under short-circuit conditions,a set of experimental platform for non-destructive short-circuit testing of SiC MOSFET is designed.The influences of parameters like short-circuit pulse width,gate-source voltage,gate resistance,drain-source voltage,stray inductance,and case temperature on the short-circuit characteristics of 1 200 V/36 A SiC MOSFET are experimentally investigated.The transient characteristics of SiC MOSFET devices with short circuit under different parameters are evaluated and analyzed comprehensively.