摘要
短路能力是衡量功率半导体器件(IGBT、SiC MOSFET等)性能的重要指标,然而SiC MOSFET的短路性能还没有得到充分的研究。为掌握SiC MOSFET在短路工况下的特性,设计一套SiC MOSFET非破坏性短路测试实验平台,从短路脉冲宽度、栅源极电压UGS、栅极电阻RG、漏源极电压UDS、杂散电感LS、壳温度TCASE等方面对1 200 V/36 A SiC MOSFET的短路特性进行全参数实验,综合评估和分析SiC MOSFET器件在不同参数下发生短路的开关瞬态特性。
Short-circuit capability is an important indicator for measuring the performance of power semiconductor devices(IGBTs,SiC MOSFETs,etc).However,the short-circuit characteristics of SiC MOSFETs have not been fully studied.In order to understand the characteristics of SiC MOSFET under short-circuit conditions,a set of experimental platform for non-destructive short-circuit testing of SiC MOSFET is designed.The influences of parameters like short-circuit pulse width,gate-source voltage,gate resistance,drain-source voltage,stray inductance,and case temperature on the short-circuit characteristics of 1 200 V/36 A SiC MOSFET are experimentally investigated.The transient characteristics of SiC MOSFET devices with short circuit under different parameters are evaluated and analyzed comprehensively.
作者
魏昌俊
孙鹏
柯俊吉
赵志斌
杨霏
WEI Changjun SUN Peng KE Junji ZHAO Zhibin YANG Fei(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Source (North China Electric Power University), Changping District, Beijing 102206, China Global Energy Interconnection Research Institute, Changping District, Beijing 102209, China)
出处
《智能电网》
2017年第8期765-772,共8页
Smart Grid
基金
国家重点研发计划项目(2016YFB0400503)~~
关键词
SIC
MOSFET
短路特性
短路测试
实验研究
SiC MOSFET
short-circuit characteristics
short-circuit test
experimental study