SiC MOSFET欧姆接触的研究进展综述

Current Research Progress on Ohmic Contact for SiC MOSFET

SiC MOSFET作为新一代SiC电力电子器件中重要的代表,具有开关电流小、频率高等优点,正受到产业界瞩目和重视。低的源漏接触电阻是衡量SiC MOSFET器件性能的重要参数之一,选择合适的金属及工艺条件是制备低接触电阻的难点。主要研究Ni、Al等常用金属分别或同时与n-SiC和p-SiC形成欧姆接触的最新进展。

Silicon carbide（SiC） MOSFET draws a lot of attention from industry for its advantages of low switched current and high frequency,which plays an important role in SiC power electronic devices.Low source-drain（S/D） contact resistance is one of the key parameters to assess the performance of the SiC MOSFET devices.The appropriate metals and process conditions are the keys to obtain a low contact resistance.In this paper,current research progress on ohmic contact formation to n-type SiC（n-SiC） and p-type SiC（p-SiC） using common metals such as nickel（Ni） and aluminum（Al） is introduced.