新型阻变存储器的物理研究与产业化前景

The physics and industrialization prospects of RRAMs

阻变存储器具有结构简单、速度快、存储密度高、易于三维集成等诸多优点,是下一代存储器的重要候选之一。文章详细介绍了阻变存储器的工作原理、电阻转变的物理机制、电阻转变过程中的物理效应以及阻变存储器的集成和产业化前景。

With its advantages of simple structure, fast speed, high storage density, ease of integration, good compatibility with CMOS processes, and so forth, the resistive switching random access memory （RRAM） is an important candidate for next-generation memories. This paper introduces in detail the operation principle of RRAMs, their resistive switching mechanism, physical effects in switching, and their integration and industrialization prospects.