摘要
对有漏电缺陷的倒装LED芯片样品进行失效分析,得出电极结构缺陷是导致芯片漏电的主要原因。这些缺陷包括:Ag反射层与外延片剥离、钝化层不完整、绝缘层边缘焊料爬壁以及电极/焊料界面互溶等。研究表明,在Ag反射层下增加金属粘结层、调整钝化层生长工艺参数、减缓绝缘层台阶坡度和改变电极材料结构等方法都可以有效地避免漏电现象发生。
From the leakage current inspection and analysis, it found that there are some of defects in the electrode structure of LED flip chips. The defects include interface delamination between Ag reflective layer and epitaxial layer, incompletion of passivation layer, solder climb wall at the edge of the insulating, and mutual dissolution between electrode pad and solder. The result showed that The leakage defects in LED flip chip can avoided by increasing the metal bonding layer under the Ag reflective layer, adjusting to the passivation layer growth process parameters, slowing down the gradient of the insulation layer, changing the electrode material and structure
出处
《电子工艺技术》
2017年第5期249-253,共5页
Electronics Process Technology
基金
广东省产学研计划基金项目(项目编号:2013B090600031)
