摘要
利用化学气相沉积法(CVD),在不同压强下分别得到β-Ga2O3纳米线(NWs)和纳米带(NBs)。研究结果表明,获得的NWs与NBs均为单斜结构的β-Ga2O3,且NWs结晶质量优于NBs。在阴极射线发光(CL)光谱中,发现NWs与NBs在近紫外和蓝光波段有较强的发光。对比NWs与NBs的CL光谱,推断β-Ga2O3在374 nm和459 nm的近紫外和蓝色发光峰分别来自于Ⅰ型和Ⅱ型氧空位(VO(I)和VO(Ⅱ))的缺陷复合。
β-Ga2O3nanowires（ NWs） and nanoribbons（ NBs） were synthesized under different gas flow rates via chemical vapor deposition（ CVD） method. The results show that the NWs and NBs are monoclinic structure. NWs has higher crystal quality than NBs. The cathode luminescence（ CL）spectra show that the NWs and NBs have strong UV-blue emission band. By comparing the CL spectra of the NWs and NBs,it is found that the UV and blue luminescence of β-Ga2O3 NWs and NBs located at 374 and 459 nm,mainly due to radiative recombination emission of oxygen vacancies（ VO（ Ⅰ）and VO（ Ⅱ））.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2017年第10期1273-1279,共7页
Chinese Journal of Luminescence
基金
国家自然科学基金(91233204
51202026
91233204
51372035
51422201)
吉林省科技发展计划(20140309012GX
20140201008GX)
教育部高等学校博士学科点基金(20110043120004
20120043110002
20130043110004)资助项目~~
关键词
化学气相沉积
β-Ga2O3
阴极射线发光
氧空位
chemical vapor deposition method
β-Ga2O3
cathode luminescence（CL）
oxygen vacancies
