不同频率高功率微波对高电子迁移率晶体管的损伤效应

Microwave damage susceptibility trend of a high electron mobility transistor as a function of frequency

针对典型的Ga As高电子迁移率晶体管(HEMT),研究了不同频率高功率微波从栅极注入HEMT后的影响。利用半导体仿真软件Sentaurus-TCAD建立了HEMT器件二维电热模型,考虑了高电场下的载流子迁移率退化和载流子雪崩产生效应,通过分析器件内部电场强度,电流密度,温度分布随信号作用时间的变化来探索其损伤过程及机理,获得了其在不同频率高功率微波作用下的烧毁时间,烧毁位置处的电场强度,电流密度以及温度的变化。研究结果表明,随着注入HPM频率的增大,烧毁时间不断减小,烧毁部位在栅极下方靠源侧,电场强度在栅极靠源侧以及漏侧出现峰值,并随频率增大而增大,电流密度随着频率的增大,先增大后减小,在6 GHz达到最大值,器件的烧毁点在栅极靠源侧,随着频率的增加,发热区逐渐缩小,在6 GHz烧毁点温度达到1 670 K。

This paper presents the damage effect of high power microwave with different frequency on GaAs high-electron-mobility transistor from gate electrode. A two-dimensional electro-thermal model of the typical HEMT is established by simulation software Sentaurus-TCAD. Mobility degradation in high electric field and avalanche generate effect are considered, analyze the distributions and variations of the electric field, the current density and the temperature. The simulation results suggests that the burnout time decreases with the signal frequency, below the gate near source side is susceptible to damage because of heat accumulate, the electric field peak occurs gate near source side and increases with the signal frequency, the current density increases and then decreases with the signal frequency, and reach the peak at 6 GHz, the heating area continuous reduce with the frequency, the temperature reach 1670 K at 6 GHz.