摘要
Ⅰ-Ⅱ-Ⅴ族基新型稀磁半导体实现了电荷和自旋注入的分离调控,成为半导体领域的研究热点。本文从传统稀磁半导体出发,详述Ⅰ-Ⅱ-Ⅴ族基新型稀磁半导体的研究进展,并对今后发展进行了展望。
I-II-V based novel diluted magnetic semiconductors achieve the separation and regulation of charge and spin injection,It has become the focus of research in semiconductor field.This paper is based on the traditional diluted magnetic semiconductors,The research progress of I-II-V based new diluted magnetic semiconductors is described,and the future development of diluted magnetic semiconductors is prospected.
出处
《科技视界》
2017年第17期68-69,共2页
Science & Technology Vision
关键词
传统稀磁半导体
Ⅰ-Ⅱ-Ⅴ族基新型稀磁半导体
研究进展
Conventional diluted magnetic semiconductors
New diluted magnetic semiconductor Based on group I-II- V
Electronic structures
Ferromagnetism
Research progress
