1D1R型阻变存储器的研究进展

Latest studies on 1D1R resistive switching memory

本文从二极管类型、器件组成和单元结构综述了1D1R型阻变存储器的研究进展。二极管可分为硅基二极管、氧化物二极管(p-n结型、肖特基型)和聚合物二极管。硅基二极管性能优异,但制备温度高,不利于集成;氧化物二极管易制备,且与CMOS工艺兼容,但正向电流密度不足;聚合物二极管虽然性能较差,但易于大面积制备,柔性好。单元结构可分为1D1R、1D2R和Bi-1D1R。1D1R研究最为广泛,但不适用于双极型阻变介质,1D2R和Bi-1D1R型可适用于双极型阻变介质。分析静态和柔性下的器件表明:阻变介质和制备方法对于存储器的性能有较大影响,柔性1D1R型阻变存储器已经具备了一定的抗弯扭、卷绕能力,其柔性主要受到基底性质、膜层间粘附力、杨氏模量差、材料属性等影响。

In this article, one diode-one resistor （1D1R） was reviewed from diode type, device and unit structures. Diodes can be divided into silicon-based diodes, oxide diodes （p-n junction, schottky） and polymer diodes. Silicon-based diodes are excellent in performance, but with high preparation temperature and low integration capability. Oxide diodes are easily prepared and compatible with the CMOS process, but with insufficient forward current density. Polymer diodes have poor performance, but are flexible and easy to be prepared in large areas. The unit structures can be divided into 1D1R, 1D2R and Bi-1D1R, respectively. 1D1R is widely studied, but not suitable for bipolar resistive switching media, while 1D2R and Bi-1D1R can be applied to bipolar resistive swithing media. Analysis shows that the medium and the preparation method have great impact on memory performance. Flexible 1D1R has a certain anti-bending and anti-winding ability, while its flexibility is mainly affected by the characteristics of substrate, film adhesion, modulus difference and material properties.