期刊文献+

中远红外及太赫兹波段非线性晶体硒化镓 被引量:6

Nonlinear Crystals GaSe in Mid, Far-infrared and Terahertz Range
原文传递
导出
摘要 中远红外及太赫兹波段激光在国防和民用领域都有非常突出和迫切的需求,硒化镓(GaSe)晶体是一综合性能优异的红外非线性光学材料,通过差频产生和光学参量振荡可实现这两个波段的可调谐激光输出。综述了GaSe晶体及掺杂晶体在合成、生长、掺杂性能及差频产生中远红外及太赫兹辐射方面的最新研究成果,重点介绍了GaSe晶体及掺杂晶体的光学、力学性能,非线性性能及它们在频率转换方面的应用性能。通过全面的分析找出综合性能最优的掺杂晶体种类。 GaSe crystal is one of infrared nonlinear optical materials with the superior performance. The tunable laser in mid, far-IR and terahertz(THz) bands can be obtained through the continuous-wave(CW) difference-frequency generation and optical parametric oscillator. Recent developments on the synthesis, growth, doped performances and mid, far-infrared and terahertz radiation by difference frequency generation(DFG) were represented. The emphases focused on the optical properties, mechanical properties, nonlinear properties and their applications in frequency conversion of GaSe and various doped GaSe crystals. The optimal doping crystals could be found by the comprehensive analysis.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2017年第10期1402-1409,共8页 Journal of The Chinese Ceramic Society
基金 国家自然科学基金杰出青年基金项目(51325201) 国家自然科学基金项目(51502051) 哈尔滨市应用技术研究与开发项目(2015RQQXJ010)
关键词 硒化镓晶体 中远红外激光 非线性光学材料 太赫兹 gallium selenide crystal mid-IR laser far-IR laser nonlinear optical materials terahertz
  • 相关文献

参考文献3

二级参考文献78

  • 1任德明,黄金哲,曲彦臣,胡孝勇,AndreevYuri,BadikovValerii,ShaidukoAnna.Optical properties and frequency conversion with AgGaGeS4 crystal[J].Chinese Physics B,2004,13(9):1468-1473. 被引量:5
  • 2Shay L J, Wernick J H. Ternary Chalcopyrite Semiconductors[M].Growth, Electronic Properties and Applications. Pergamon Press, New York, 1975.
  • 3Buehler E, Buehler E, Shay J L,et al. The Melt Growth and Doping of CdGeAs2[J]. Journal of Electronic Materials,1973, 2(4):601.
  • 4Ruderman W, Zwieback I. Development of Large High Quality Chalcopyrite Single Crystals for Nonlinear Optical Applications[C]. Materials Research Society Symposium Proceedings,2000:361.
  • 5Dmitriev V G, Gurzadyan G G, Nikogosyan D N. Handbook of Nonlinear Optical Crystals[M]. 2nd edition, Springer Verlag, Berlin, 1995.
  • 6Rud Yu V. Optoelectronic Phenomena in Zinc Germanium Diphophide[J].Semiconductors,994, 28:633.
  • 7Mason P D, Jackson D J, Gorton E K. CO2 Laser Frequency Doubling ZnGeP2[J]. Optics Communications,1994,110:163.
  • 8Bliss D F, harris M, Horrigan J, et al. Synthesis and Growth Processes for Zinc Germanium Diphophide[J]. Journal of Crystal Growth,1994,137(12):145.
  • 9Schunemann P G, Pollak T M. Urtralow Gradient HGF-grown ZnGeP2 and CdGeAs2 and Their Optical Properties[J]. Materials Bulletin,1998,23(7):23.
  • 10Verozubova G A, Gribenyukov A I, Korotkova V V, et al. Synthesis and Growth of ZnGeP2 Crystals for Nonlinear Optical Applications[J]. Journal of Crystal Growth,2000,213(3):334.

共引文献41

同被引文献47

引证文献6

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部