摘要
For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
作者
朱志甫
张贺秋
梁红伟
彭新村
邹继军
汤彬
杜国同
Zhi-Fu Zhu He-Qiu Zhang Hong-Wei Liang Xin-Cun Peng Ji-Jun Zou Bin Tang Guo-Tong Du(School of Physics, Dalian University of Technology, Dalian 116024 Engineering Research Center of Nuclear Technology Application （Ministry of Education）, East China Institute of Technology, Nanchang 330013 Jiangxi Province Engineering Research Center of New Energy Technology and Equipment （Ministry of Education）, East China Institute of Technology, Nanchang 330013 School of Microelectronics, Dalian University of Technology, Dalian 116024 State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012)
基金
Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005
the Key Program of National Natural Science Foundation of China under Grant No 41330318
the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515
the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006
the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501
the Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)Ministry of Education under Grant NoHJSJYB2016-1
