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Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor

Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor
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摘要 As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen (CEA) threatens human health seriously ali over the globe. Fast electrical and highly sensitive detection of the CEA with A1GaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations (ranging from 50picogram/milliliter (pg/ml) to 50 nanogram/milliliter (ng/ml)) of CEA and achieved a detection limit as low as 50pg/ml at Vas = 0.5 V. The drain-source current shows a c/ear increase of 11.5μA under this bias. As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen (CEA) threatens human health seriously ali over the globe. Fast electrical and highly sensitive detection of the CEA with A1GaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations (ranging from 50picogram/milliliter (pg/ml) to 50 nanogram/milliliter (ng/ml)) of CEA and achieved a detection limit as low as 50pg/ml at Vas = 0.5 V. The drain-source current shows a c/ear increase of 11.5μA under this bias.
作者 Xiang-Mi Zhan Quan Wang Kun Wang Wei Li Hong-Ling Xiao Chun Feng Li-Juan Jiang Cui-Mei Wang Xiao-Liang Wang Zhan-Guo Wang 占香蜜;王权;王琨;李巍;肖红领;冯春;姜丽娟;王翠梅;王晓亮;王占国(Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第9期87-90,共4页 中国物理快报(英文版)
基金 Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and 2016YFB0400301 the National Natural Science Foundation of China under Grant No 61334002 the National Science and Technology Major Project
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