化学气相沉积法制备氮化硼纳米管的研究进展:反应装置、气源材料、催化剂

A Review of Chemical Vapor Deposition for Synthesis of Boron Nitride Nanotubes:Reaction Devices,Vapor Sources and Catalysts

氮化硼纳米管(BNNTs)具有优良的耐高温、抗氧化、防辐射、绝缘和导热性能,因此,在航空航天、辐射屏蔽、热界面材料以及深紫外发射等领域具有潜在的应用前景。然而,高品质BNNTs的可控制备和批量生产仍然是学术和工业界的重大挑战。在BNNTs的众多制备方法中,化学气相沉积法(CVD)是最有潜力实现其可控制备的方法之一。但是,科学家们对于CVD法制备BNNTs的催化机理和影响因素尚未形成共识。鉴于此,文章从反应装置、氮源、硼源和催化剂4个方面对CVD法制备BNNTs进行了综述,并系统总结了相应的规律。在此基础上,分析了目前BNNTs可控制备中存在的问题,并对CVD法在BNNTs可控制备中的作用进行了展望,以期对今后BNNTs的制备起到借鉴作用。

Boron nitride nanotubes （BNNTs） have great application potential in aerospace radiation shielding materials, thermal interface materials, deep ultraviolet emission materials and many other fields due to their excellent performances--oxidation resistance, radiation shield, heat conduction and so forth. However, BNNTs＇ controllable and large scale preparation still faces an enormous challenge. Among the different kinds of BNNTs＇ preparation methods, chemical vapor deposition （CVD） is one of the most promising methods for its controllable preparation. Nevertheless, scientists have not reached a consensus on the growth mechanism and influencing factors of BNNTs＇ synthesis by CVD. Hence, this article provides a review on preparation of BNNTs by CVD, and a discussion about the effects of reaction devices, nitrogen sources, boron sources and catalysts. Besides, the unsettled issues and a prospect for the controllable synthesis of BNNT by CVD are also proposed.