掺氮超纳米金刚石薄膜制备及其电化学性能

Preparation and Electrochemical Performances of Nitrogen-doped Ultrananocrystalline Diamond Films

针对掺氮超纳米金刚石(N-UNCD)制备过程中由于N2掺杂源的高活化能所致的氮原子有效掺入量低的问题,采用二乙胺同时作为碳源和氮源,通过微波等离子体化学气相沉积法(MPCVD)在硅基底上沉积N-UNCD膜。用扫描电镜、拉曼光谱和XRD对其表面形貌、组成结构等进行分析,并将制备的N-UNCD薄膜作为工作电极,考察薄膜电化学电容和对多巴胺的电化学检测性能。结果表明,使用二乙胺为反应源制备所得膜材为典型的N-UNCD薄膜,将其作为工作电极,循环伏安法和计时电流法测试电容值分别为42.1μF·cm^(-2)和32.2μF·cm^(-2);采用差分脉冲伏安法对多巴胺进行检测时,检测限可达0.88μM。

Given the fact that high active energy of N2 as a doping source would result in the low doping efficiency of nitrogen atoms in ultrananocrystalline diamond films,nitrogen-doped ultrananocrystalline dia-mond （N-UNCD）films were deposited on Si substrates via microwave plasma chemical vapor deposition （MPCVD）technique,in which diethylamine was utilized as the sole nitrogen and carbon sources. Sur-face morphological,microstructural and composition characteristics of as-deposited N-UNCD films were in-vestigated with scanning electron microscopy （SEM）,Raman spectrum and X-ray diffraction （XRD）. As a novel electrochemical electrode,the electrochemical detection for biomolecule dopamine of N-UNCD films was carried out besides the electrochemical capacitance in diluted H2 SO4 solution. The obtained re-sults show that the as-prepared samples are typical N-UNCD films. The electrochemical double layer ca-pacitance of N-UNCD films could reach 42. 1 μF·cm-2 by cyclic voltammetry （CV）measurement and 32. 2 μF·cm-2 by chronoamperometry measurement. For the case of dopamine,the detection limit could approximate 0. 88 μM.