GaN微波器件转移特性脉冲测试研究

Research on the Pulse Test of the Transfer Characteristics of GaN Devices

对GaN微波器件的转移特性开展了脉冲测试研究。通过改变脉冲通道的数量、静态工作点和脉冲宽度,获得了不同的脉冲测试条件下GaN晶体管的转移特性,并对不同测试条件下的测试结果进行了对比分析,获得了不同的脉冲测试条件对器件转移特性的影响。得到了GaN晶体管的转移特性对栅极脉冲比较敏感,漏极脉冲只是在栅极电压作用下起辅助作用,其对转移特性的影响程度主要依据栅极电压的影响而定的结论。

The pulse test is carried out for the transfer characteristics of GaN microwave devices. By changing the number of pulse channels, quiescent bias ancl pulse width, the transfer characteristics of GaN devices under different pulse test conditions are obtained. And the test results of different test conditions are compared and analyzed to obtain the influence of different pulse test conditions on the transfer characteristics of the GaN devices. It is concluded that the transfer characteristics of the GaN devices are sensitive to the gate pulse bias, and the darin pulse only supportes to the action of the gate pulse voltage. And the influence of darin pulse on transfer characteristics is mainly depended on the gate voltage.