薄膜工艺陶瓷基板面铜均匀性改善工艺研究

利用薄膜工艺在陶瓷表面得到铜薄膜,并利用电镀工艺对薄膜进行加厚。同时,针对电镀铜厚的不均匀性,通过调整镀液成分、缩短阳极排列长度,调整钛篮间距并改善电力线分布等电镀工作条件,使Top面铜厚极差由19.24μm降至10.32μm,CPK由0.78升至1.59。Bot面铜厚极差由18.12μm降至11.43μm,CPK由0.88升至1.79,极大地改善了电镀铜厚的均匀性,增加了陶瓷表面精细线路制作的可能性,为有覆晶/共晶工艺要求的LED光学器件提供了具备良好平整度、共面度及光洁度的高效散热载体。

Copper flm,which could be thickened by panel plating,was obtained using DPC technology.Meanwhile,the copper plating thickness range was greatly decreased from 19.24μm to 10.32μm with the CPK increasing from 0.78 to 1.59 on top surface.The copper plating thickness range was sharply decreased from 18.12μm to 11.43μm with the CPK increasing from 0.88 to 1.79 on bottom face by adjusting ingredient of plating solution and shortening anodequeuing distance for the improvement of power line distribution,which led to the possibility of Fine line fabrication on Ceramic surface and provide a high effciency heat dissipation carrier of good evenness,good coplanarity and good fneness for LED optical devices that have fip chip and Eutectic technology needs.