摘要
NAND flash chips have been innovated from two-dimension （2D） design which is based on planar NAND cells to three-dimension （3D） design which is based on vertical NAND cells. Two types of NAND flash technologies-charge-trap （CT） and floating-gate （FG） are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared.
NAND flash chips have been innovated from two-dimension （2D） design which is based on planar NAND cells to three-dimension （3D） design which is based on vertical NAND cells. Two types of NAND flash technologies-charge-trap （CT） and floating-gate （FG） are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared.
