直流磁控溅射功率对溅射生长GZO薄膜光电性能的影响

Influence of Sputtering Power on Optical and Electrical Properties of GZO Films Deposited by DC Magnetron Sputtering

本文采用直流磁控溅射沉积系统在玻璃基底上沉积镓掺杂氧化锌(GZO)薄膜,将溅射功率从120W调整到240W,步长为30W,研究功率变化对GZO薄膜的晶体结构、表面形貌、光学性能和电学性能的影响。结果表明,溅射功率对GZO薄膜电阻率有显著的影响。溅射功率为210W时薄膜呈现最低电阻率为3.31×10^(-4)Ω·cm,可见光波段平均光学透光率接近84%。随着溅射功率的增加,薄膜表面形貌和生长形态发生较大变化,并直接得到具有一定凸凹不平的微结构,GZO薄膜的致密性先增加后降低。

Ga-doped ZnO （GZO） thin films were deposited by DC magnetron sputtering system on glass substrates. The sputtering power was adjusted from 120W to 240W, with the step size of 30W. The structure, surface morphology, optical and electrical properties of the GZO films prepared at different DC sputtering powers were investigated by using X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect test system. The results indicated that the resistivity of the GZO films is dominated by the sputtering power. The films deposited at 210W exhibit the lowest resistivity of 3.31 × 10^-4 Ω·cm. The best average optical transmittance of the GZO films prepared is approximately 84% in the visible wavelength. With the increase of sputtering power, the surface morphology and growth form of the films are changing greatly, meanwhile with a certain uneven microstructure. The compactness of GZO films increased then decreased with the increase of the power.