CMOS图像传感器像素区离子注入角度与图像延迟关系的研究

Study on the Relationship Between the Ion Implantation Angle and the Image Delay in the Pixel Region of CMOS Image Sensor

图像延迟是CMOS图像传感器产品的一个非常重要的评估参数。在像素隔离区域中,不同的离子注入角度会对电路中TX器件(传输门晶体管)的电性参数造成影响,并将会导致产品图像的延迟。由于批量高能离子注入机台椎体效应会导致在同一片晶圆之内离子注入角度的不同,本文通过针对像素隔离区域不同的离子注入角度对图像延迟的关系进行研究,优化了离子注入的角度均匀性,改善在同一片晶圆之内图像延迟的一致性。

Image delay is a very important evaluation parameter of CMOS image sensor products.In the pixel separation region, the different ion implantation angle will affect the electrical parameters of the TX device(the transmission gate transistor)in the circuit, and will lead to the delay of the product image.Due to the different ion implantation angle within a wafer body effect of high energy ion implantation machine batch, using the ion pixel isolation region of different injection angles to study the relationship between image delay, optimization of the ion implantation angle uniformity, improve the consistency of delayed image within the same wafer.